12/21/2023 0 Comments Icircuit reference![]() channel width modulation, threshold voltage, processing, or external variations, e.g. G05F3/242- Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. ![]() G05F3/24- Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only.G05F3/20- Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations.G05F3/16- Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices.G05F3/10- Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics.G05F3/08- Regulating voltage or current wherein the variable is dc.G05F3/02- Regulating voltage or current.G05F3/00- Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties.G05F- SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES.238000006467 substitution reaction Methods 0.000 description 1.238000004519 manufacturing process Methods 0.000 description 2.Assignors: HUANG, MING-CHIEH, SWEI, STEVEN, YANG, TIEN-CHUN Priority to US14/051,631 priority patent/US9442506B2/en Publication of US20140035553A1 publication Critical patent/US20140035553A1/en Publication of US9442506B2 publication Critical patent/US9442506B2/en Application granted granted Critical Status Active legal-status Critical Current Adjusted expiration legal-status Critical Links ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). reassignment TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority to US22285209P priority Critical Priority to US12/825,652 priority patent/US8575998B2/en Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. Original Assignee Taiwan Semiconductor Manufacturing Co TSMC Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Taiwan Semiconductor Manufacturing Co TSMC Ltd Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) ( en Inventor Ming-Chieh Huang Tien-Chun Yang Steven Swei Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Granted Application number US14/051,631 Other versions US9442506B2 Google Patents US20140035553A1 - Voltage reference circuit with temperature compensation US20140035553A1 - Voltage reference circuit with temperature compensation
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |